Abstract
AbstractWe have demonstrated high performance C60 thin‐film transistors by inkjet‐printing technology. C60 inks was jetted onto a polymer or self‐assembled monolayers gate dielectric layer, then vacuum‐dried to form uniform thin films. Inkjet‐printed C60 thin‐film transistors on a polymer gate dielectric layer showed an electron mobility of 1.6 cm2/Vs in operating voltage of 5 V. These results are attributed to high uniformity of vacuum‐dried C60 thin films and low charge trap density between C60 thin films and gate dielectric layer interface.
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