Abstract
We propose an extraction method of sub‐gap density of states (sub‐gap DOSs) for deteriorated oxide semiconductor thin‐film transistors (TFTs). Since the sub‐gap DOSs in the TFTs are high, the potential in the channel oxide semiconductor must bend under depletion and accumulation operations even if the drain current is low. In this method, the band‐bending is considered and the DOSs of such the TFT can be extracted from one transfer curve at low drain voltage. This method is simple and useful to evaluate the maximum values of the DOSs.
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