Abstract
We have demonstrated foldable thin-film transistor (TFT) fabricated on a free-standing plastic substrate. The performances of TFTs with split source drain electrodes are unchanged after repeated 2,000 time folding to 60 and 90 degree with bending radius of 0.47 and 0.31 mm, respectively. Due to the reducing the area of metal electrode and active layer, no cracks were found by the extreme bending stress.
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