Abstract
Low voltage and high frequency organic field‐effect transistors (OFETs) show great potential in the field of wearable devices. To clarify the high frequency operation mechanism of OFETs, this work presents a frequency characterization model and verifies it through simulations in Atlas. The current gain cut‐off frequency model derivation for the OFETs was carried out in the subthreshold region, including conventional physical factors such as effective mobility, channel length, channel width, contact length, and gate dielectric capacitance. Besides these, the trapgap density at the channel was initially considered as an important factor affecting the cut‐off frequency of OFETs. Together with contact lengths, their influence on the current gain cut‐off frequency was verified with simulations in Atlas.
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