Abstract
We propose a method to form low‐resistance amorphous zinc tin oxide thin film (a‐ZTO) by aluminum (Al) reaction method. After the optimized reaction process, a‐ZTO film exhibits a low sheet resistance of 0.71(KΩ/□). The metallic tin and the large amount of oxygen vacancies formed on the surface of a‐ZTO film contribute to the high conductivity. An optimized aluminum reaction method for fabrication of low‐resistance with high thermal stability a‐ZTO film is well demonstrated.
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