Abstract
Oxygen and oxygen-related centers in cast multicrystalline silicon (mc-Si) have been investigated. The concentration profile and the map of oxygen in mc-Si revealed that oxygen with higher concentration occurred at the bottom area and at the edge area of mc-Si ingots. The oxygen concentration and its profile were partly dependent on the cooling progress. It was found that the thermal donors related to oxygen were generated in the area of higher oxygen concentration. The concentration of thermal donors can reach to 1×10 14/cm 3. Meanwhile, as-grown oxygen precipitates were observed at the bottom of mc-Si.
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