Abstract
We have calculated the oxygen vacancy levels in Al 2O 3 using first principles methods. They are found to lie just below midgap in the oxide, equivalent to below the Si valence band edge when aligned to the silicon band structure. This low energy accounts for the behaviour of Al 2O 3 in oxide capping layers and as an insulator in future Flash memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.