Abstract
Bismuth ferrite, recognized for its exceptional physical properties as a multiferroic material, has recently attracted considerable attention due to its high domain wall conduction. However, challenges in further improving domain wall conductivity and magnetoelectric coupling hamper the practical application of pure-phase BFO thin films. Addressing these limitations, we successfully synthesized Bi1-xCaxFeO3 thin films on LaAlO₃ (001) substrates with varied calcium (Ca) doping levels (x = 0–0.3) through pulsed laser deposition. Our experimental data demonstrate a direct relationship between the films' electrical conductivity and the prevalence of oxygen vacancies (OV). An upward trend in both OV density and electrical conductivity emerges with incremental Ca doping, peaking at x = 0.2. Beyond this doping threshold, a further increase in Ca concentration inversely affects OV density and electrical conductivity. These insights suggest that fine-tuning OV concentration in Ca-doped BFO thin films can significantly modulate their electrical properties, paving the way for the advancement of bismuth ferrite-based electronic devices.
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