Abstract
Effect of a relatively high axial magnetic field on the segregation behavior of oxygen in Czochralski silicon crystal growth is investigated. was applied continually during crystal growth after initial growth of 50 mm length at . Well‐defined growth conditions were used without rotating either crystal or crucible. The oxygen concentration was measured by a high resolution FTIR technique using a small sampling area of in the longitudinal sections. At, significant fluctuations are observed in the oxygen concentration , which is indicative of substantial convections in the melt. On applying 4 kG, the oxygen level decreased drastically, after a temporary rise in the middle of the initial transient, to 3.0 from an average value of 15.0 ppma at in 8.4 mm crystal length or about 8 min. This value increased subsequently to 5.0 ppma in 70 mm growth or about 70 min when the crystal was detached and the melt quenched. 5.9 ppma is measured in the quenched melt. The effective segregation coefficient at 4 kG is 0.85. The closeness of the to unity indicates a substantial suppression of the melt convection at 4 kG. The transient profile and the drastic decrease of on applying 4 kG indicate that the interfacial distribution coefficient is significantly larger than one.
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