Abstract
This work reports on the effects of air exposure on the photoluminescence intensity of GaN nanocolumns, with diameters ranging from below 40nm up to around 230nm, grown selectively on GaN/sapphire and GaN/Si(111). The high control of dimensions provided by selective area growth epitaxy allowed for a better study of the relationship between the observed phenomena, namely the photoluminescence intensity quenching due to oxygen photo-adsorption, and the nanocolumns properties (morphology and dimensions). For nanocolumns with diameters below 120nm and lengths of about 300nm, photoluminescence intensity dropped by more than 90% of the initial value, while for shorter nanocolumns a reduced drop value was found.
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