Abstract
Orientation selective epitaxial growth of CeO 2 ( 1 0 0 ) and (1 1 0) layers is attained on practical H-terminated Si(1 0 0) surfaces by controlling substrate bias and a growth rate using reactive DC magnetron sputtering enhanced with an inductively coupled RF plasma in an Ar / O 2 environment. Application of oxygen radical beams to reactive sputtering proved to enable growth temperature lowering by at least 100 ∘ C in the CeO 2 ( 1 0 0 ) layer growth under optimum substrate bias of 15 V, wherein conventional reactive sputtering requires ∼ 800 ∘ C . X-ray diffraction analyses confirmed that crystalline quality of CeO 2 ( 1 0 0 ) layers grown with the oxygen radical beam application is much improved than those grown by conventional reactive sputtering.
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