Abstract
LiNbO3 films were grown on nanocrystalline diamond (NCD)/Si substrates with amorphous SiO2 buffer layer by pulsed laser deposition technique at various oxygen pressures ranging from 10Pa to 80Pa. The stoichiometric LiNbO3 ceramic target was used. Significant effects of oxygen pressure on c-axis orientation, stoichiometry, crystallinity and surface morphology of LiNbO3 films were investigated. It was found that the above properties are strongly dependent on the oxygen pressure. Completely c-axis oriented LiNbO3 films with the average surface roughness of 9.0nm could be achieved under an optimum oxygen pressure of 40Pa. Surface acoustic wave devices were fabricated and characterized utilizing the structure of LiNbO3/SiO2/NCD/Si.
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