Abstract
abstractA study of the effect of oxygen flow rate on the energy band gap of the c-axis-oriented ZnO and Zn0.95Cu0.05O films, deposited on glass substrates by RF magnetron sputtering, is reported. An increase of the oxygen flow rate (partial pressure) during deposition results in an increase in the band gap (Eg) of Zn0.95Cu0.05O films from 2.80 to 3.10 eV. The maximum observed enhancement is 10.5%. For the same oxygen flow rate (partial pressure), the band gap of a Zn0.95Cu0.05O film is found to be lower than that of ZnO as predicted by Ferhat et al (2009 Appl. Phys. Lett.94 142502). A correlation has been observed between the residual strain and the band gap of doped and undoped ZnO films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
