Abstract
It is established by infrared spectroscopy and Hall measurements that the oxygen precipitates formed during preliminary high-temperature treatment suppress the generation of thermal donors in Si grown either by the Czochralski method or by applying a magnetic field to a melt. Possible mechanisms for the influence of precipitation on the formation of thermal donors are proposed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
