Abstract
Oxygen-nitrogen complexes with the shallow donor characteristic represented by the effective mass theory were formed in Czochralski silicon (CZ Si) annealed in a nitrogen atmosphere. By fitting the depth profile of this defect to a diffusion equation, we estimated the nitrogen diffusion coefficient to be about 2×10−6 cm2/s at 1270 °C. This value is 105 times larger than that indicated by previously reported data.
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