Abstract
Three additional infrared absorption lines of interstitial oxygen were found in silicon doped with isovalent impurities (Ge, Sn, or C). These lines are supposed to be associated with ν3 vibration of Si2O quasimolecules disturbed by isovalent impurity (IVI) atoms located in first, second and third coordination spheres. The shift of absorption band for IVI-disturbed quasimolecule is shown to be proportional to the deformation charge of IVI and independent of its sign. The results obtained confirm a presence of preferential arrangement of IVI atoms relative to interstitial oxygen in silicon lattice.
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