Abstract
The oxygen in-diffusion process in the oxygen-deficient single 2223 phase Bi 1.6Pb 0.4Sr 2Ca 2Cu 3O x ceramic oxide has been investigated by in situ resistance measurements during ramp annealing and isothermal annealing in flowing oxygen. It is observed that the oxygen in-diffusion is much faster than the out-diffusion. A one dimensional diffusion model of oxygen vacancy is proposed, and a good approximate solution for Fick's second law of diffusion, considering the distance dependence of diffusivity, D, is obtained as ovbar|C = 1 − ( 8 π 2 )(1+ 8D't l 2 ) −1 . The activation energy for oxygen in diffusion process is determined to be 0.86 eV, and the diffusivity D is closely related to the average concentration of the oxygen vacancy which decreases with annealing time during oxygen replenishment. Finally, we have discussed a simple mechanism of oxygen vacancy diffusion along the a direction in the Bi 2O 2 layers.
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