Abstract
O-doped Bi2S3 is a promising candidate for interfacial resistive switching. Here we introduce the oxygen into chemical-bath-deposited Bi2S3 thin film by annealing in air, and study the electrode effects to its resistive switching by comparing the switching behaviors of O-doped Bi2S3 grown on different conductive substrate. It shows that the oxygen-doping in Bi2S3 via air annealing is an effective method to introduce traps to the interface between O-doped Bi2S3 and the conductive substrate of F-doped SnO2 or Pt, and produces the bipolar resistive switching. Moreover, by analyzing the I-V characteristics and differential-conductance features of both O-Bi2S3/FTO, and O-Bi2S3/Pt system, we found that using Pt as the substrate could produce more robust resistive switching, and attribute it to the stronger Fermi-level pinning of Pt with heavier work function than that of FTO.
Published Version
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