Abstract
An empirical solution for the oxygen distribution in a thin epitaxial silicon layer and substrate wafers heavily doped with boron and antimony accounting for the prebake step is developed. The results from secondary ion mass spectroscopy analysis indicate that heavily doping with either boron or antimony has no effect on oxygen outdiffusion during epitaxial deposition. In contrast to slow-diffusing species such as boron and antimony, the plane at which the oxygen concentration is equal to one-half of the bulk oxygen concentration does not remain at the epitaxial layer/substrate interface, but is a function of the effective diffusion length of oxygen atoms for the total epitaxial process.
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