Oxygen diffusion in oxide thin films grown on SrTiO3

Abstract

$\mathrm{SrTi}{\mathrm{O}}_{3}$ thin films were grown on $^{18}\mathrm{O}$-exchanged $\mathrm{SrTi}{\mathrm{O}}_{3}$ single crystalline substrates by pulsed-laser deposition, rf sputtering, and oxide molecular-beam epitaxy to study their oxygen diffusion depth profiles using secondary ion mass spectrometry and elastic recoil detection analysis depth profiling. The oxygen depth profiling shows that $\mathrm{SrTi}{\mathrm{O}}_{3}$ films prepared with the three different deposition techniques will take oxygen from the substrate, even at room temperature. This confirms that the substrate is one possible oxygen source for the growth of oxide thin films independent of the physical vapor deposition technique employed. It was also found that a reactive oxygen environment changes the oxygen composition of the substrate during the growth of a film and partly replaces $^{18}\mathrm{O}$ with $^{16}\mathrm{O}$ up to a depth of several tens of nm. These findings imply that $\mathrm{SrTi}{\mathrm{O}}_{3}$ and therefore other ion conducting oxide substrates, which are commonly used as platforms for thin film growth, can be considered capricious in nature with respect to oxygen chemistry and lattice constants.