Abstract
Oxygen diffusion phenomena were investigated on Nb-doped SrTiO 3 crystals after Ar or F ion implantation. SIMS measurements indicated that oxygen diffusion profiles consisted of high and low diffusivity regions; the profiles were analyzed by a two-layer model and diffusion coefficients were evaluated. According to TEM observation, there existed three layers in the implanted region whose boundaries were in good agreement with the positions analyzed. A large number of dislocations were produced by the ion implantation, which disappeared upon thermal annealing. The distribution of oxygen vacancies was determined from the diffusion coefficients, and compared with the results of TRIM simulations.
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