Abstract
The influence of O2 upon electrical properties has been examined on anatase titania (TiO2) thin films prepared by a sol–gel dip-coating method. When O2 is turned on, a rapid and considerable decrease in electrical conductivity is detected at 500°C in the TiO2 film doped with Ta, although the conductivity remains almost constant in a pure TiO2 film. A complex impedance analysis reveals that the variation of conductivity is mainly dominated by the grain-boundary resistance. Surface segregation of Ta ion is suggested at higher Ta concentration by X-ray diffraction analysis.
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