Abstract
Silicon species were deposited on tetrafluoroethylene (Teflon) with pulsed laser silicon ablation at 532 nm under UHV. Surface species were studied with X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Tetrafluorocarbon (CF 4) was easily desorbed by the decomposition reaction of Teflon with flying silicon species. Surface species were characterized as a function of pulsed laser shots. Silicon species were terminated with oxygen in gas phase to form two kinds of SiO x clusters ( x<0.3) in addition to oxygen terminated silicon networks. Their work functions could be estimated by the shift of their Fermi energies.
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