Abstract
Spin-on doping of phosphorus has been investigated and applied for the emitter fabrication of crystalline Si solar cells. Heat treatment in oxygen atmosphere at relatively low temperature of 550 °C prior to phosphorus diffusion is proved effective for improving solar cell performance, showing a conversion efficiency enhancement of more than 0.2% absolute. Internal quantum efficiency measurements show obvious enhancements at both short and long-wavelength regions. Secondary ion mass spectroscopy and Infrared absorption analysis reveal reduced C impurities after the heat treatment, possibly caused by burning the organic residues in the coated dopant source layer.
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