Abstract
Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs during the melting of raw materials and during the crystal growth process. Quantitative analysis of impurity transfer using numerical and experimental analysis is important to control impurity concentrations. This paper reviews the analysis of the impurity transport phenomena in crystal growth furnaces of Czochralski and directional solidification methods by a model of global analysis and an experiment during the crystal growth of silicon.
Highlights
The cross shows the concentration measured at A. They reported that the concentration of Carbon monoxide (CO) caused by the reaction between the Si melt and the SiO2 crucible was higher value than that caused by the SiO2 crucible without Si melt. This result shows that silicon monoxide (SiO), which was generated through the dissolution of the SiO2 crucible by the Si melt, was the one of the important reactants in the generation of CO
This paper reviewed the contamination phenomena of the impurities produced during CZ and directional solidification crystal growth methods using experimental and numerical approaches
CO contamination in the CZ method is a result of the reaction between SiO and C generated at the surface of the heaters and at the interface between the
Summary
Growth of Silicon by Czochralski and Directional Solidification Processes. Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Reported the calculated distribution of oxygen concentration in a crystal grown by the directional solidification method which is similar to that of the other published paper [9]. A global model containing a chemical reaction including CO and silicon monoxide (SiO) based on a thermodynamic analysis of the reactions at the elevated temperature was reported by Bornside et al [5] A coupled model with a transport model for predicting SiO and and CO concentrations in gas of argon (Ar), and C and O concentrations in the Si mel reported by Gao et al [6] They reported the results by suing a quasi-static meth calculation. For the directional solidification method (DS) of multicrystalline Si, the top part of the it is important to investigate the mechanism of Si oxynitride formation using num ingot has a large number of grains. Methods introduced to investigate the formation of Si3 N4 and Si2 N2 O during the crystal growth process
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