Abstract
The mechanism of metal-assisted electroless etching of silicon in HF-oxidizing agent-H 2O etching system as a function of oxidizing agent concentration was studied. Three types of oxidizing agent were experimented namely Na 2S 2O 8, K 2Cr 2O 7 and KMnO 4. Their concentrations were varied from 0.05 M to 0.3 M. The layers formed on silicon were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX). It is shown that an insoluble solid-phase film (K 2SiF 6) form on silicon surface when concentration of K 2Cr 2O 7 or KMnO 4 increases in chemical solutions. On other hand, when Na 2S 2O 8 concentration increases, the surface roughness decreases without any chemical complex formation.
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