Abstract
A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are investigated. 1/f drain noise magnitude allows extraction of slow oxide interface trap density. Random Telegraph Signal (R.T.S.) gate noise allows to extract properties of defects of the dielectric, such as trap energy level, cross section and its localization from the Si/Si02 interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
