Abstract
Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.
Highlights
Pulsed Laser Deposition (PLD) is a relatively new exploratory growth technique especially suitable for oxide thin films and heterostructures [1, 2]
Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces
We report the growth of SrTiO3 (STO) and BaTiO3 (BTO) thin films using PLD combined with high-pressure Reflection High Energy Electron Diffraction (RHEED) system (STAIB “Torr RHEED” with double differentially pumped 35 keV gun) to control the growth rate as well as the surface quality of the thin films with submonolayer resolution
Summary
Pulsed Laser Deposition (PLD) is a relatively new exploratory growth technique especially suitable for oxide thin films and heterostructures [1, 2]. An nspulse high-power laser with wavelength in the UV ablates material from the target and excites it into a plasma state This plasma propagates with particle energies up to about 100 eV perpendicularly to the target surface and condenses as thin film on the substrate. First we will demonstrate the possibilities of PLD to grow complex multielement compounds, as for example, the high-Tc superconductor YBa2Cu3O7−δ, doped ZnO semiconductor layers, or alloxide optical multilayers, so called Bragg reflectors, with high lateral homogeneity on large area sapphire or silicon substrates with 2-inch, 3-inch, or even 4-inch diameter. Recent results on the growth of very abrupt MgZnO-ZnO quantum well structures with well widths in the range 1–7 nm are shown These structures grown by a specially optimized PLD process with reduced laser energy density show strong quantum-confined Stark effect which appears as a measure of the abruptness of the embedded quantum well nanolayers. The presented results give an overview on the state of the art capability of PLD for growth of advanced oxide thin film structures for basic and applied investigations up to the level of fully functional demonstrator devices
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