Abstract
The microstructure of Co–O, the interface between Co–O and electrodes, and the resistance switching in Co–O have been investigated. The Co–O film on the Pt electrode has quite dense crystallized grains and smooth surface, making it appropriate for the ultrahigh density non-volatile memory. About 5nm thick interfacial oxide nanolayer including Ta2O5 was confirmed at the Co–O/Ta interface, which was spontaneously formed owing to the low oxygen potential of Ta. The low current resistance switching and operational stability in Pt/Co–O/Ta are attributed to the interfacial layer acting as the embedded load resistance component in the forming process. The engineering for the nanoregion at the interface is crucial in order to improve the performance of the resistance switching random access memory.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
