Abstract
The use of calcium, strontium and aluminum implantation into gate and field oxides for threshold voltage control is investigated. Eliminating conventional boron threshold implants could serve to improve subthreshold and leakage behavior for MOSFETs, eliminate the buried-channel device for P-channel transistors and retain a high breakdown voltage under the field oxides. Theoretical predictions for a positive flatband voltage shift are seen to be experimentally vindicated for Ca and A1, whereas Sr was seen only to provide a negative shift for the doses considered. The technique is limited by charge screening in the oxide, which at higher doses causes the threshold to shift negatively rather than positively.
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