Abstract
The density of occupied band gap states at the interface between a-Si:H and a-SiO x:H was measured as a function of oxide thickness for differently prepared oxides by means of photoelectric yield spectroscopy and ellipsometry. For naturally grown oxides we found a decrease in the density of occupied defects from 6·10 12 cm −2 to values below 5·10 11 cm −2. This could be observed mainly during the growth of the first 0.8 nm of the oxide. In this thickness range we also found strong decrease of the photoelectric yield suggesting that occupation and charging of the gap states is altered. Oxides prepared by plasma exposure show a different and unstable interface however.
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