Abstract
We report that annealing of an oxidized InSb (100) single-crystal sample at 250°C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.
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