Oxidation resistance of tantalum carbide-hafnium carbide solid solutions under the extreme conditions of a plasma jet

Abstract

Abstract The oxidation behaviors of tantalum carbide (TaC)- hafnium carbide (HfC) solid solutions with five different compositions, pure HfC, HfC-20 vol% TaC (T20H80), HfC- 50 vol% TaC (T50H50), HfC- 80 vol% TaC (T80H20), and pure TaC have been investigated by exposing to a plasma torch which has a temperature of approximately 2800 °C with a gas flow speed greater than 300 m/s for 60 s, 180 s, and 300 s, respectively. The solid solution samples showed significantly improved oxidation resistance compared to the pure carbide samples, and the T50H50 samples exhibited the best oxidation resistance of all samples. The thickness of the oxide scales in T50H50 was reduced more than 90% compared to the pure TaC samples, and more than 85% compared to the pure HfC samples after 300 s oxidation tests. A new Ta 2 Hf 6 O 17 phase was found to be responsible for the improved oxidation performance exhibited by solid solutions. The oxide scale constitutes of a scaffold-like structure consisting of HfO 2 and Ta 2 Hf 6 O 17 filled with Ta 2 O 5 which was beneficial to the oxidation resistance by limiting the availability of oxygen.