Oxidation property of SiO2-supported small nickel particle prepared by the sol-gel method

Abstract

The oxidation property of SiO2-supported small Ni particle has been studied by means of the in-situ XAFS method. The Ni particle with the average diameter of 4 nm supported on SiO2 was prepared by the sol-gel method. The XANES spectrum of the small metallic Ni particle was clearly different from that of bulk Ni. The exposure of diluted O2 gas at room temperature promoted the surface oxidation of Ni(0) particle. During the temperature programmed oxidation process, the supported Ni(0) particle was quantitatively oxidized to NiO, and the oxidation temperature was lower by ca. 200 °C than that of the SiO2-supported Ni particle with the larger particle radius of 17 nm prepared by the impregnation method.