Abstract
We report an oxidation study of an Sn overlayer on Si(100) carried out at 400 °C by rapid isothermal processing (RIP) and furnace processing. Single oxide phase SnO2 could be obtained only by rapid isothermal processing. Based on x-ray diffraction, x-ray photoelectron spectroscopy, high-frequency capacitance-voltage characteristics, and breakdown measurements, improved quality of dielectric films was obtained by RIP. A possible explanation based on the difference in the radiation spectrum of the two sources of energy is also given.
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