Abstract
We have investigated the thermal oxidation of strained Si1−xGex and Si1−x−yGexCy layers and the influence of the thermal process on the structure of the layers. Using XPS and SIMS depth profiles, we have found a germanium pile-up in the epitaxial layer near the oxide-layer interface. Using transmission electron microscopy (TEM), we have observed that crystallinity is well conserved, but additionally, we have found SiC precipitates. A qualitative model for the oxidation of this kind of binary and ternary alloys is presented. The model is based on the strain development of the samples and depends on germanium and carbon compositions and on the temperature of the process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
