Abstract
Determination of the interface locations and the layer thicknesses in SIMS depth profiling of Si/Ti multilayer films was investigated by cesium ion beam. The raw SIMS depth profiles were converted to the compositional depth profiles by the relative sensitivity factors of Si and Ti derived from the atomic fractions of a reference Si‐Ti alloy film determined by Rutherford backscattering spectroscopy. The locations of the interfaces were determined by 50 at% definition in the compositional SIMS depth profiles, and the thicknesses of the Si and Ti layers were measured from the interfaces. The layer thicknesses of the Si/Ti multilayer film were also investigated by Auger electron spectroscopy depth profiling using the same process and same definition. Copyright © 2014 John Wiley & Sons, Ltd.
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