Abstract
The oxidation of Si in 15 mbar isotopically labeled ‐gas mixtures at 750 to 1000°C was studied in situ by probing the gas‐phase composition of an enclosed volume with a mass spectrometer. The experiments reveal interactions between the gas phase and the oxide which are not accessible from analyses of the solid reaction product. The dissociation rate of was calculated from oxygen exchange reactions, and , and compared with the oxidation rate. In the ‐gas mixture, the dissociation rate of was calculated from the oxygen exchange and compared with the oxidation rate. In the oxidation process, the dissociation rate of decreased by a factor of more than 20. A general discussion on the dependence of the dissociation rate on the oxidation rate is made in relation to different types of migrating species in various systems.
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