Abstract
The feasibility of high-resolution Rutherford backscattering spectroscopy (HRBS) to study the initial stage of Si(001) oxidation is examined. It is shown that HRBS provides oxygen depth profiling with depth resolution at an atomic level. After oxidation of Si(001) at room temperature under 2 ×10-6 Torr oxygen partial pressure for 20 min, the coverage of oxygen was determined to be 1.2 ±0.3 ML.
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