Abstract
The optical and structural properties of oxidized silicon wafers, previously implanted with N + ions at different doses, were investigated. A decrease in oxidation rate is observed as N + ion dose increases due to the effect of incorporated nitrogen. Higher refractive index of the grown layer, deduced from spectroscopic ellipsometry, indicates the formation of silicon oxynitride thin films. X-Ray photoelectron spectroscopy shows a small amount of nitrogen in the oxidized Si region, where the nitrogen atoms are mainly bonded to silicon. The SiO vibration band at 1096 cm −1, measured by FTIR, is at the same position as that at oxidation of unimplanted silicon. No bands connected to NH and SiH vibration bonds are observed indicating low content of hydrogen in the silicon oxynitride film.
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