Abstract
Aluminium foils oversaturated with 5.1015/cm2 implanted115In+ ions were oxidized in 200 mbar oxygen or vacuum annealed at 370–870 K. The samples were analyzed by the Rutherford backscattering (RBS) and perturbed angular correlation (PAC) techniques, using some 1011/cm2 implanted radioactive111In tracers. Furthermore, the oxygen surface profiles were also scanned with high resolution by using the nuclear resonance technique (NRA). The formation of passivating Al2O3 surface layers, preventing deeper oxygen diffusion and the indium diffusion into these oxidized surface layers and into the bulk, were studied. Several quadrupole interaction frequencies previously attributed to strained cubic indium precipitates and indium (-vacancy) clusters were observed. When the samples were oxidized above 750 K, the formation of In-O complexes and of substitutional111In in Al2O3 was observed.
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