Abstract
The oxidation process of copper was investigated by the Rutherford backscattering spectrometry (RBS) and perturbed angular correlation (PAC) techniques. The variation of the oxygen concentration below the surface was analysed by RBS. The PAC method was applied to obtain a microscopic picture of the oxidation process. Some 10 12 radioactive 111In + ions were implanted at 400 keV into copper foils, which were oxidized at a fixed oxygen pressure either isothermally or isochronally at increasing temperature ( T ox = 300–1200 K). The PAC spectra were taken at room temperature. The hyperfine interaction parameters were compared with those found after 111In implantation into Cu 2O and CuO pressed powder samples, respectively oxide layers on copper foils. The broad frequency distribution observed during the oxidation process is suggested to be due to a complex formed by indium, oxygen and copper vacancies in the Cu 2O lattice.
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