Abstract
Fluorinated silicon nitride films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) varying the relative [NF3]/([NH3]+[NF3]) flow ratio in the range 0–1. The as-deposited films show an increase in the –NH radicals and a decrease in the –SiH radicals when the flow ratio increases above 0.5. In addition, these films are very unstable in hot water as well as in normal air atmospheres. The oxidation kinetics has been explained in terms of a direct oxidation reaction of the silicon nitride lattice accompanied by the formation of fluorinated complexes which also react with moisture to give finally SiO2.
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