Abstract
We have developed a crystal growth simulator based on tight-binding quantum chemical molecular dynamics (TB-QCMD) method and applied it to plasma-enhanced chemical vapor deposition (PECVD) processes for silicon thin-film growth via SiH3 radicals on hydrogen-terminated Si(001). We successfully simulated the abstraction of a surface hydrogen atom by irradiated SiH3 radical and the formation of a dangling bond on the hydrogen-terminated Si(001) surface. SiH3 radical was subsequently adsorbed on this dangling bond. When these processes were repeated, the thin film grew. Thus, a detailed mechanism was successfully found for the chemical reaction and electron transfer dynamics of silicon thin film growth by PECVD.
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