Abstract
Investigations have been carried out on the thin film oxidation of Copper in the temperature range 65–120°C. Both annealed and 25% cold deformed samples were employed. The results are discussed with reference to the logarithmic equation developed by William and Hayfield as well as Uhlig, considering the arrival of electrons at the oxide-gas interface by thermionic emission as the rate controlling step. The concentration of electron trapping centers in the oxide and the activation energy are found to be higher in case of cold worked material. The number of Fermi electrons arriving at the barrier per unit time as calculated from the oxidation data is found to be lower in the deformed Copper.
Published Version
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