Abstract
The high temperature oxidation on the novel directional order porous Ti3SiC2 has been investigated in the study. The oxidation resistance is improved by increasing the purity of Ti3SiC2 due to the deterioration of TiC. The oxidation rate of directional order porous Ti3SiC2 with the wall thickness of 52 µm is about 5.02 × 10−14, 5.91 × 10−13 and 1.88 × 10−12 g2/cm4·s for the temperature of 800 °C, 900 °C and 1000 °C, respectively, which is much lower than that of the compact Ti3SiC2. The effect of porous structure on oxidation behavior has been studied in detail. As the wall thickness or wavelength decreases which increases the specific surface area, the weight gain (∆m/m) increases, but ∆m/s decreases. It indicates that the oxidation resistance of whole sample decreases, but the oxide layer thickness of every single lamina decreases. The evolution mechanism of oxidation behavior and oxidation resistance with scaffold composition and pore structure is explored in detail.
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