Abstract
We discuss a previously overlooked gate resistance (R/sub g/) component in silicided polysilicon-gate metal-oxide-semiconductor field-effect-transistors (MOSFETs). Since the high-frequency properties depend critically on R/sub g/, this has motivated the recent addition of a resistive gate input in the BSIM3v3 MOSFET model. Our TLM results show that the contact resistance between silicide and polysilicon, built into the gate of a typical MOSFET, is of the same magnitude as the silicide sheet resistance. This contact resistance affects model scaling and will dominate R/sub g/ in narrow-width and short-channel MOS transistors.
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