Abstract
The high-power operation of the lateral mode stabilized 780-nm AlGaAs laser diode (LD) with the window-mirror structure has been achieved. The stable lateral mode operation up to 250 mW is realized. This is the highest power record among the narrow stripe LDs with the wavelength of 780 nm. This LD is suitable for the next generation high-speed (16-24/spl times/) CD-R/RW drives needing 200 mW class LDs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE journal of selected topics in quantum electronics : a publication of the IEEE Lasers and Electro-optics Society
Paper Title
Journal
Date
