Abstract
The high-power operation of the lateral modes stabilized 660 nm AlGaInP laser diode (LD) with the real-refractive-index waveguide structure has been achieved. The stable lateral mode operation up to 143 mW at 70/spl deg/C is realized. This is the highest power record among the narrow stripe 660-nm LDs. This LD Is suitable for the next generation high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LD.
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