Abstract
This work presents specific investigation on the simultaneous demonstration of superior forward-current-sustaining and avalanche-breakdown-dissipating capability in GaN pn junction, which is critical for the ruggedness of future high-power-figure-of-merit vertical GaN MOSFET in tolerating inductive current strikes. Based on the doping profile design and edge electric field modulation in the pn junction, over 10 kA/cm 2 current handling capability in both forward and reverse direction has been achieved. Meanwhile, no degradation in the device performance has been observed under continuous forward current stress tests and consecutively repetitive unclamped inductive switching tests, revealing the excellent ruggedness of state-of-art GaN-on-GaN pn junction against the inductive energy transients, thus promising reliable operation in the vertical power device applications. • The simultaneous demonstration of superior forward-current-sustaining and avalanche-breakdown-dissipating capability is investigated. • Over 10 kA/cm 2 current handling capability in both forward and reverse direction has been achieved in the pn junction. • No degradation in the device performance has been observed under continuous forward current stress tests.
Published Version
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